ECE EDS: Randall Feenstra, Carnegie Mellon University

Description

Studies of Two-Dimensional Materials Using Tunneling Electrons

Abstract
Over the past decade, much research world-wide has focused on two-dimensional (2D) materials, in which the electrons are localized within a single atomic plane. In this talk, studies using scanning tunneling microscopy and spectroscopy of heterostructures of 2D layers, utilizing both flake-type preparation and epitaxial-growth methods, will be described. STM/STS permits a detailed, atomic-scale view of the structure of the layers, along with quantitative information concerning band gaps of the semiconducting materials (and superconducting gaps when present) and local variation in the gaps. 

Biography 
Randall Feenstra is a Professor in the Department of Physics at Carnegie Mellon University. He received his B.Ap.Sc. degree in Engineering Physics from the University of British Columbia in 1978, and his Ph.D. degree in Applied Physics from the California Institute of Technology in 1982. Dr. Feenstra spent 13 years as a Research Staff Member at the IBM Research Laboratory in Yorktown Heights, New York, during which time he was active in applying the scanning tunneling microscope to the study of semiconductor materials. He joined CMU in 1995, and there he built up a combined system for molecular beam epitaxy and STM study of GaN surfaces.